« Interaction of Moving Grain Boundaries with Solutes »
Yuri Mishin is a Professor of Physics in the Physics and Astronomy Department at George Mason University in Fairfax (Virginia). He received his Ph.D. in Solid State Physics from the National University of Science and Technology MISiS in Moscow, Russia. He was a Senior Research Scientist at the National Institute of Aviation Materials (Moscow) before joining the Institute of Materials Physics at the University of Muenster (Germany) as an Alexander von Humboldt Research Fellow. From 1995 to 2000 he was on the research faculty at the Department of Materials Science and Engineering at Virginia Tech before joining George Mason University as a professor. Yuri Mishin’s research is focused on theory and computer modeling of physical properties of structural and functional materials, particularly materials interfaces, thermodynamics and statistical mechanics of alloys, phase transformations, diffusion processes, and mechanical behavior of materials.
Chair professor, University of Pennsylvania, Philadelphia, USA
Title of the invited presentation:
« The How and Why of Grain Boundary Dynamics: a Disconnection Perspective »
David J. Srolovitz is a Chair Professor in Materials Science and Engineering and a Senior Fellow of the Insitute of Advanced Study (on leave from the University of Pennsylvania where he is the Bordogna Professor of Engineering and Applied Science, Director of the Penn Institute for Computational Science). Previously, Srolovitz was a Chair of Mechanical & Aerospace Engineering and Professor of Applied & Computational Mathematics at Princeton University, Professor of Materials Science & Engineering and Applied Physics at the University of Michigan, and both Dean and Professor of Physics at Yeshiva University. He also served as the Executive Director of the Institute of High Performance Computing, A*STAR in Singapore and was on the staffs of Los Alamos National Laboratory (Theoretical Division) and Exxon Corporate Research (Metallurgy). He is the author of ~500 papers on topics in materials theory and simulation ranging from crystal defects, microstructure evolution, deformation, and growth processes. He is a member of the US National Academy of Engineering and Fellow of the Materials Research Society, TMS, ASM International, and the Institute of Physics (UK). He is the winner of the 2013 Materials Research Society’s Materials Theory Award. His current research interests focus on grain boundaries, interfaces, microstructure evolution and the the effects of these on plastic deformation, as well as interfaces and mechanics of 2D materials.
Postdoctoral researcher, EMAT, University of Antwerp, Antwerpen, Belgium
Title of the invited presentation:
« Grain Boundaries in Solar Cells: Structure-Property Correlations »
Dr. Chen Li received a B.Sc. in Materials Physics from Wuhan University, China, and a Ph.D. in Condensed Matter Physics from the Institute of Physics of the Chinese Academy of Sciences, Beijing. In 2012 she took a postdoc position in Oak Ridge National Laboratory, using electron microscopy to study defects especially grain boundaries in CdTe solar cells. Her work revealed the physical reason why Cl-treatment is so beneficial. In 2014 she moved to the University of Vienna and received her first grant – an EU Marie Curie fellowship studying interfaces of mineral oxides. In 2017 she moved to the Max Planck Institute for Solid State research in Stuttgart, developing in-situ microscopy to understand the growth of solar materials. From April 2019, she will join the Electron microscopy for Materials science institute, at the University of Antwerp, continuing her work on understanding structure-property correlations in energy materials.
« Atomic-Scale Observations of Step Structure and Migration Mechanisms in Interfaces »
Ulrich Dahmen obtained his Ph.D. in Materials Science from UC Berkeley in 1979, then joined Berkeley Lab in a postdoctoral position, and subsequently was named principal investigator and senior staff scientist. From 1992 to 2014 he directed the National Center for Electron Microscopy at Berkeley Lab, where he continues to serve as senior advisor.
From 2004-2009, he led the TEAM Project, a large collaborative effort within the US Department of Energy, which helped advance the development of electron microscopy. As principal investigator he led a research program on the Crystallography of Microstructures, using electron microscopy as a major tool for microstructural characterization. His research focuses on the relationship between atomic structure and behavior of materials.
He has published extensively on the crystallographic structure of interfaces, the evolution of precipitate morphologies and the effects of size and shape on the behavior of embedded nanoparticles.
« Grain Boundary Atomic Structures and their Dynamic Behavior in Oxides »
Yuichi Ikuhara is Professor and Director of Nanotechnology Center, Institute of Engineering Innovation at University of Tokyo since 2003. He received Dr. Eng. from Department of Materials Sciences, Kyushu University in 1988.
His current research interest is in interface and grain boundary and interface phenomena, advanced transmission electron microscopy and so on. Dr. Ikuhara is author and coauthor of about 750 scientific original papers in this field, and has more than 360 invited talks at international and domestic conferences.
He received « Medal with Purple Ribbon » from the Emperor of Japan (2016), « Humboldt Research Award » from Alexander von Humboldt Foundation (2010) and so on. He is a fellow of the American Ceramics Society (2011), member of World Ceramic Academy (2014), and an associate member of the Science Council of Japan.
He holds a group leader position at JFCC and WPI (World Premier International Research Center Initiative) professor at Tohoku University concurrently.
« Using in-situ TEM to probe Interface related Plasticity Mechanisms »
Frédéric Mompiou is a CNRS scientist at the Centre d’Élaboration de Matériaux et d’Études Structurales (CEMES), in Toulouse, France. His research interests are at the crossing between mechanical properties and transmission electron microscopy (TEM). He is a specialist of the dynamics of elementary plasticity mechanisms (involving dislocations and grain boundaries), observed at nanoscale using in-situ TEM in a wide range of metallic materials.
Associate professor, Department of Materials Science and Engineering, POSTECH, South Korea
Title of the invited presentation:
« Unveiling metal-insulator transition in vanadium oxides »
Dr. Si-Young Choi is an associate professor in department of materials science and engineering at POSTECH. He installed JEOL ARM-200F with ASCOR for laboratory research and established Advanced Electron Microscopy & Functional Imaging Laboratory based on the aberration-corrected STEM. Based on his experience in the relevant fields, he recently established Artificial Intelligence based Materials Analysis Center in POSTECH.
He had got his PhD degree in Korea Advanced Institute of Science and Technology in 2004. Since then, he was a fellow researcher in the field of aberration-corrected scanning transmission electron microscopy in Oxford University and the University of Tokyo. In 2008, he joined Korea Institute of Materials Science (KIMS). He served as Head of Department of Materials Modeling & Characterization and built up the probe-corrected JEOL 2100F, differential phase contrast detector system, and various in-situ observation facilities during his stay in KIMS. In 2017, he moved to department of materials science and engineering at POSTECH.
His main specialty is the atomic scale analysis via aberration-corrected STEM in the variety of functional oxides, such as ferroelectric/piezoelectric perovskite oxides, Li-ion battery cathode oxides, and multiferroic oxides, thereby providing direct evidence of the atomic scale evolution of material property. Therefore, he and his group focus on the application of aberration-corrected STEM with emphasis on the unprecedented atomic scale imaging techniques aimed at unraveling and understanding the various material property-dependent device performance.